 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| PD - 95782 IRG4BC20W-SPBF INSULATED GATE BIPOLAR TRANSISTOR Features * Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications * Industry-benchmark switching losses improve efficiency of all power supply topologies * 50% reduction of Eoff parameter * Low IGBT conduction losses * Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability * Lead-Free C VCES = 600V G E VCE(on) typ. = 2.16V @VGE = 15V, IC = 6.5A n-channel N-channel Benefits * Lower switching losses allow more cost-effective operation than power MOSFETs up to 150kHz ("hard switched" mode) * Of particular benefit to single-ended converters and boost PFC topologies 150W and higher * Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >>300kHz) D2Pak Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM VGE EARV PD @ T C = 25C PD @ T C = 100C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 600 13 6.5 52 52 20 200 60 24 -55 to + 150 300 (0.063 in. (1.6mm) from case ) Units V A V mJ W C Thermal Resistance Parameter RJC RCS RJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ. --- 0.5 --- 1.44 Max. 2.1 --- 40 --- Units C/W g (oz) www.irf.com 1 8/27/04 IRG4BC20W-SPBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)CES V(BR)ECS V(BR)CES/TJ VCE(ON) VGE(th) VGE(th)/TJ gfe ICES IGES Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 600 -- -- V VGE = 0V, IC = 250A Emitter-to-Collector Breakdown Voltage 18 -- -- V VGE = 0V, IC = 1.0A Temperature Coeff. of Breakdown Voltage -- 0.48 -- V/C VGE = 0V, IC = 1.0mA -- 2.16 2.6 IC = 6.5A VGE = 15V Collector-to-Emitter Saturation Voltage -- 2.55 -- IC = 13A See Fig.2, 5 V -- 2.05 -- IC = 6.5A , TJ = 150C Gate Threshold Voltage 3.0 -- 6.0 VCE = VGE, IC = 250A Temperature Coeff. of Threshold Voltage -- -8.8 -- mV/C VCE = VGE, IC = 250A Forward Transconductance 5.5 8.3 -- S VCE = 100 V, IC = 6.5A -- -- 250 VGE = 0V, VCE = 600V Zero Gate Voltage Collector Current A -- -- 2.0 VGE = 0V, VCE = 10V, TJ = 25C -- -- 1000 VGE = 0V, VCE = 600V, TJ = 150C Gate-to-Emitter Leakage Current -- -- 100 nA VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. Max. Units Conditions 26 38 IC = 6.5A 3.7 5.5 nC VCC = 400V See Fig.8 10 15 VGE = 15V 22 -- 14 -- TJ = 25C ns 110 160 IC = 6.5A, VCC = 480V 64 96 VGE = 15V, RG = 50 0.06 -- Energy losses include "tail" 0.08 -- mJ See Fig. 9, 10, 14 0.14 0.2 21 -- TJ = 150C, 15 -- IC = 6.5A, VCC = 480V ns 150 -- VGE = 15V, RG = 50 150 -- Energy losses include "tail" 0.34 -- mJ See Fig. 10, 11, 14 7.5 -- nH Measured 5mm from package 490 -- VGE = 0V 38 -- pF VCC = 30V See Fig. 7 8.8 -- = 1.0MHz Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. (See Fig. 13b) Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. VCC = 80%(VCES), VGE = 20V, L = 10H, RG = 50, (See Fig. 13a) Repetitive rating; pulse width limited by maximum junction temperature. 2 www.irf.com IRG4BC20W-SPBF 25 For both: Triangular wave: 20 Duty cycle: 50% TJ = 125C Tsink = 90C Gate drive as specified Power Dissipation = 13W Clamp voltage: 80% of rated Load Current ( A ) 15 Square wave: 60% of rated voltage 10 5 Ideal diodes 0 0.1 1 10 100 A 1000 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 100 I C , Collector-to-Emitter Current (A) I C, Collector-to-Emitter Current (A) TJ = 150 C 10 10 TJ = 150 C TJ = 25 C V GE = 15V 20s PULSE WIDTH 1 10 TJ = 25 C V CC = 50V 5s PULSE WIDTH 5 6 7 9 10 11 1 1 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 IRG4BC20W-SPBF 14 12 10 8 6 4 2 0 25 50 75 100 125 150 3.0 VCE , Collector-to-Emitter Voltage(V) VGE = 15V 80 us PULSE WIDTH IC = 13 A Maximum DC Collector Current(A) IC = 6.5 A 2.0 IC =3.25 A 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature ( C) TJ , Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.05 P DM t1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t2 0.1 0.02 0.01 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4BC20W-SPBF 1000 800 VGE , Gate-to-Emitter Voltage (V) 100 VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20 VCC = 400V I C = 6.5A 16 C, Capacitance (pF) 600 Cies 12 400 8 200 Coes Cres 4 0 1 10 0 0 5 10 15 20 25 30 VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 0.15 Total Switching Losses (mJ) 0.14 Total Switching Losses (mJ) V CC = 480V V GE = 15V TJ = 25 C I C = 6.5A 10 50 RG = Ohm VGE = 15V VCC = 480V 1 IC = 13 A IC = 6.5 A 0.13 0.1 IC = 3.25 A 0.12 0 10 20 30 40 50 0.01 -60 -40 -20 0 20 40 60 80 100 120 140 160 R , Gate Resistance (Ohm) RG,Gate Resistance () TJ , Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 IRG4BC20W-SPBF 0.8 0.6 I C , Collector-to-Emitter Current (A) Total Switching Losses (mJ) RG TJ VCC VGE = 50 Ohm = 150 C = 480V = 15V 100 VGE = 20V T J = 125 oC 0.4 10 0.2 SAFE OPERATING AREA 0.0 0 2 4 6 8 10 12 14 1 1 10 100 1000 I C , Collector-to-emitter Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA 6 www.irf.com IRG4BC20W-SPBF L 50V 1000V VC * 0 - 480V D.U.T. RL = 480V 4 X I C@25C c 480F 960V d * Driver same type as D.U.T.; Vc = 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor will increase to obtain rated Id. Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit IC L Driver* 50V D.U.T. VC Fig. 14a - Switching Loss Test Circuit * Driver same type as D.U.T., VC = 480V A 1000V d e c d 90% e VC 90% 10% t d(off) Fig. 14b - Switching Loss Waveforms 10% I C 5% t d(on) tr E on E ts = (Eon +Eoff ) tf t=5s E off www.irf.com 7 IRG4BC20W-SPBF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information T HIS IS AN IRF530S WIT H LOT CODE 8024 AS S EMBL ED ON WW 02, 2000 IN T HE AS S EMBL Y L INE "L" Note: "P" in ass embly line pos ition indicates "Lead-Free" INT ERNAT IONAL RECT IF IER LOGO AS S EMBLY L OT CODE PART NUMBER F530S DAT E CODE YEAR 0 = 2000 WEEK 02 L INE L OR INT E RNAT IONAL RE CT IF IER LOGO AS SE MBLY LOT CODE PART NUMBE R F 530S DAT E CODE P = DE SIGNAT ES LE AD-FREE PRODUCT (OPT IONAL) YEAR 0 = 2000 WEE K 02 A = AS SE MBLY S IT E CODE 8 www.irf.com IRG4BC20W-SPBF D2Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135) FEED DIRECTION 1.85 (.073) 1.65 (.065) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.08/04 www.irf.com 9 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ |
Price & Availability of IRG4BC20W-SPBF
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |